HSD965 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSD965
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD965 is suited for use as AF output amplifier and flash unit.
Spec. No. : HE6537
Issued Date : 1992.11.25
Revised Date : 2002.02.22
Page No. : 1/3
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 40 V
VCEO Collector to Emitter Voltage ...................................................................................... 20 V
VEBO Emitter to Base Voltage .............................................................................................. 7 V
IC Collector Current (Continuous) ......................................................................................... 5 A
IC Collector Current (Peak PT=10mS) .................................................................................. 8 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
20
-
BVEBO
7
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.35
*hFE1
230
-
*hFE2
150
-
fT
-
150
Cob
-
-
Classification Of hFE
Max.
-
-
-
0.1
0.1
1
800
-
-
50
Unit
V
V
V
uA
uA
V
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=10V, IE=0
VEB=7V, IC=0
IC=3A, IB=100mA
VCE=2V, IC=0.5A
VCE=2V, IC=2A
VCE=6V, IE=50mA
VCB=20V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Q
230-380
R
340-600
S
560-800
HSD965
HSMC Product Specification