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| HSD882S_06 Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver. | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HSD882S
NPN Epitaxial Planar Transistor
Spec. No. : HE6544
Issued Date : 1992.11.25
Revised Date : 2006.07.28
Page No. : 1/5
Description
The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay
driver.
TO-92
Absolute Maximum Ratings
⢠Maximum Temperatures
Storage Temperature.............................................................................................................................................. -55 ~ +150 °C
Junction Temperature ........................................................................................................................................ 150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) .................................................................................................................................. 750 mW
⢠Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage .............................................................................................................................................. 40 V
VCEO Collector to Emitter Voltage........................................................................................................................................... 30 V
VEBO Emitter to Base Voltage ................................................................................................................................................... 5 V
IC Collector Current.................................................................................................................................................................. 3 A
Electrical Characteristics (TA=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
40
-
-
BVCEO
30
-
-
BVEBO
5
-
-
ICBO
-
-
1
IEBO
-
-
1
*VCE(sat)
-
-
0.5
*VBE(sat)
-
-
2
*hFE1
30
-
-
*hFE2
160
-
500
fT
-
90
-
Cob
-
45
-
Unit
V
V
V
uA
uA
V
V
MHz
pF
Classification of hFE2
Rank
P
Range
160-320
E
250-500
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=30V, IE=0
VEB=3V, IC=0
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HSD882S
HSMC Product Specification
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