HSD882 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6004
Issued Date : 1998.03.15
Revised Date : 2002.01.25
Page No. : 1/4
HSD882
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD882 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 40 V
BVCEO Collector to Emitter Voltage.................................................................................... 30 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC) ...................................................................................................... 3 A
IC Collector Current (Pulse) ................................................................................................. 7 A
IB Base Current (DC) ......................................................................................................... 0.6 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
40
-
-
BVCEO
30
-
-
BVEBO
5
-
-
ICBO
-
-
1
IEBO
-
-
1
*VCE(sat)
-
0.3
0.5
*VBE(sat)
-
1
2
*hFE1
30
150
-
*hFE2
100
200
500
fT
-
90
-
Cob
-
45
-
Classification Of hFE2
Unit
Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=30V
VEB=3V
IC=2A, IB=0.2A
IC=2A, IB=0.2A
IC=20mA, VCE=2V
IC=1A, VCE=2V
IC=0.1A, VCE=5V
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Q
100-200
P
160-320
E
250-500
HSD882
HSMC Product Specification