HSD879 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – SILICON NPN EPITAXIAL TYPE TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSD879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 1/3
Features
• Charger-up time is about 1 ms faster than of a germanium transistor
• Small saturation voltage can bring less power dissipation and flashing times
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage .................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current............................................................................................................... 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Electrical Characteristics (Ta=25°C)
Symbol
Min. Typ. Max.
BVCEO
10
-
-
BVEBO
6
-
-
BVCBO
30
-
-
BVCEX
20
-
-
ICBO
-
-
100
IEBO
-
-
100
*hFE
140
210
400
*VCE(sat)
-
0.3
0.4
fT
-
200
-
Cob
-
30
-
Unit
V
V
V
V
nA
nA
V
MHZ
pF
Test Condition
IC=1mA
IE=10uA
IC=10uA
IC=1mA, VBE=3V
VCB=20V
VBE=4V
VCE=2V, IC=3A
IC=3A, IB=60mA
VCE=10V, IC=50mA
VCB=10V, f=1MHZ
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HSD879
HSMC Product Specification