English
Language : 

HSD669A Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY
MICROELECTRONICS CORP.
HSD669A
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier complementary pair with HSB649A
Spec. No. : HE6630
Issued Date : 1995.12.18
Revised Date : 2002.05.03
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .....................................................................................+150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 180 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current (DC) .................................................................................................. 1.5 A
IC Collector Current (Pulse) ................................................................................................. 3 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
180
-
-
BVCEO
160
-
-
BVEBO
5
-
-
ICBO
-
-
10
*VCE(sat)
-
-
1
VBE(on)
-
-
1.5
*hFE1
100
-
320
*hFE2
30
-
-
fT
-
140
-
Cob
-
14
-
Classification Of hFE1
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=1mA, IE=0
IC=10mA, IB=0
IE=1mA, IC=0
VCB=160V, IE=0
IC=500mA, IB=50mA
IC=150mA, VCE=5V
IC=150mA, VCE=5V
IC=500mA, VCE=5V
IC=150mA , VCE=5V
VCB=10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
C
100-200
D
180-320
HSD669A
HSMC Product Specification