HSD667A Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – SILICON NPN EPITAXIAL

HI-SINCERITY
MICROELECTRONICS CORP.
HSD667A
SILICON NPN EPITAXIAL
Description
Low Frequency Power Amplifier Complementary Pair With
HSB647A.
Spec. No. : HE6510-B
Issued Date : 1996.07.15
Revised Date : 2000.10.01
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 120 V
VCEO Collector to Emitter Voltage ................................................................................... 100 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current (DC)...................................................................................................... 1 A
IC Collector Current (Pulse).................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
120
-
BVCEO
100
-
BVEBO
5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
60
-
*hFE2
30
-
fT
-
140
Cob
-
12
Classification of hFE
Max.
-
-
-
10
1
1.5
200
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=100V, IE=0
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=150mA
VCB=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
HSMC Product Specification