HSD313 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6728
Issued Date : 1993.04.12
Revised Date : 2002.05.07
Page No. : 1/4
HSD313
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD313 is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 60 V
BVCEO Collector to Emitter Voltage.................................................................................... 60 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
60
-
BVEBO
5
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
40
-
*hFE2
40
-
ft
-
8
Classification Of hFE1
Max.
-
-
-
0.1
5
1
1
1.5
320
-
-
Unit
Test Conditions
V
IC=1mA, IE=0
V
IC=10mA, IB=0
V
IE=100uA, IC=0
mA VCB=20V, IE=0
mA VCE=60V, IB=0
mA VEB=4V, IC=0
V
IC=2A, IB=0.2A
V
IC=1A, VCE=2V
IC=1A, VCE=2V
IC=0.1A, VCE=2V
V
VCE=5V, IC=0.5A
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
hFE
C
40-80
D
60-120
E
100-200
F
160-320
HSD313
HSMC Product Specification