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| HSD2118J Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – LOW VCE(sat) TRANSISTOR (20V, 5A) | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HJ200205
Issued Date : 2002.04.01
Revised Date : 2005.07.14
Page No. : 1/5
HSD2118J
LOW VCE(sat) TRANSISTOR (20V, 5A)
Feature
⢠Low VCE(sat), VCE(sat)=0.6V(Typ.)(IC=4A/IB=0.1A)
⢠Excellent DC Current Gain Characteristic
⢠Complements the HSB1386J
Structure
Epitaxial Planar Type NPN Silicon Transistor
TO-252
Absolute Maximum Ratings (TA=25°C)
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W
⢠Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................... 50 V
VCEO Collector to Emitter Voltage ........................................................................................................................ 20 V
VEBO Emitter to Base Voltage ................................................................................................................................ 6 V
IC Collector Current ............................................................................................................................................... 5 A
IC Collector Current (Pulse) .................................................................................................................................. 10 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*hFE
fT
Cob
Min.
Typ.
Max.
50
-
-
20
-
-
6
-
-
-
-
0.5
-
-
0.5
-
0.6
1
180
-
620
-
150
-
-
30
-
Unit
V
V
V
uA
uA
V
MHz
pF
Classification of hFE
Rank
Range
R
180-390
E
370-620
Test Conditions
IC=50uA
IC=1mA
IE=50uA
VCB=40V
VEB=5V
IC/IB=4A/0.1A
VCE=2V, IC=0.5A
VCE=6V, IE=-50mA, f=100MHz
VCE=20V, IE=0A, f=1MHz
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HSD2118J
HSMC Product Specification
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