HSD1609S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6515
Issued Date : 1993.03.15
Revised Date : 2002.01.15
Page No. : 1/4
HSD1609S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSD1609S is designed for low frequency high voltage amplifier
applications, complementary pair with HSB1109S.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 160 V
VCEO Collector to Emitter Voltage .................................................................................... 160 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
160
-
BVCEO
160
-
BVEBO
5
-
ICBO
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
60
-
*hFE2
30
-
fT
-
140
Cob
-
3.8
Classification of hFE1
Max.
-
-
-
10
2
1.5
320
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=10uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=140V, IE=0
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
IE=0, VCB=10V, f=1MHZ
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
D
160-320
HSD1609S
HSMC Product Specification