HSD1609 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6606
Issued Date : 1993.03.15
Revised Date : 2002.01.15
Page No. : 1/4
HSD1609
NPN EPITAXIAL PLANAR TRANSISTOR
Features
• Low frequency high voltage amplifier
• Complementary pair with HSB1109
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................. 1.25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 160 V
BVCEO Collector to Emitter Voltage.................................................................................. 160 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current........................................................................................................ 100 mA
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
160
-
-
BVCEO
160
-
-
BVEBO
5
-
-
ICBO
-
-
10
*VCE(sat)
-
-
2
VBE(on)
-
-
1.5
*hFE1
60
-
320
*hFE2
30
-
-
fT
145
-
-
Cob
-
3.8
-
Classification Of hFE1
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=10uA
IC=1mA
IE=10uA
VCB=140V
IC=30mA, IB=3mA
IC=10mA, VCE=5V
IC=10mA, VCE=5V
IC=1mA, VCE=5V
IC=10mA , VCE=5V
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
D
160-320
HSD1609
HSMC Product Specification