HSC945SP Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. :HSP200201
Issued Date : 1998.01.06
Revised Date : 2002.01.25
Page No. : 1/4
HSC945SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC945 is designed for using driver stage of AF amplifier and low speed switching
applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipations
Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage......................................................................................... 60 V
VCEO Collector to Emitter Voltage...................................................................................... 50 V
VEBO Emitter to Base Voltage.............................................................................................. 5 V
IC Collector Current........................................................................................................ 100 mA
IB Base Current................................................................................................................ 50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
50
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.1
*hFE1
50
-
*hFE2
135
-
fT
150
-
Cob
-
-
Classification of hFE2
Max.
-
-
-
100
100
0.25
-
600
600
4
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
IE=10uA
VCB=60V, IE=0
VEB=5V, IB=0
IC=100mA, IB=10mA
VCE=6V, IC=0.1mA
VCE=6V, IC=1mA
IC=1mA , VCE=10V, f=100MHz
IE=0, VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Q
135-270
P
200-400
K
300-600
HSC945SP
HSMC Product Specification