HSC5094 Datasheet, PDF (1/7 Pages) Hi-Sincerity Mocroelectronics – NPN SILICON BIPOLAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200103
Issued Date : 1999.08.01
Revised Date : 2002.10.25
Page No. : 1/7
HSC5094
NPN SILICON BIPOLAR TRANSISTOR
Description
The HSC5094 is a NPN Silicon Transistor designed for low noise
amplifier at VHF, UHF and CATV band.
Features
SOT-23
• Low Noise and High Gain: NF=1.4dB, Ga=12dB @ V_CE=2V, Ic=4.2mA, f=0.9GHz
• High Power Gain: MAG=13.5dB @ V_CE =5V, Ic =4.5mA, f=0.9GHz
Applications
• Low noise and high gain amplifiers
• Oscillator buffer amplifiers
Electrical Characteristics
• Maximum Ratings (Ta=25°C)
Parameters
Symbol
Min. Typ. Max. Unit
Collector-Emitter Breakdown Voltage
V_CEO
-
10
-
V
Collector-Base Breakdown Voltage
V_CBO
-
18
-
V
Emitter-Base Breakdown Voltage
V_EBO @ I_E=100uA
-
2.5
-
V
Collector Current
I_C
-
*20
-
mA
Collector Power Dissipation
P_C
-
150
-
mW
Junction Temperature
T_j
-
125
-
°C
Storage Temperature
T_stg
-50
-
125 °C
* Note: Here we define the point where the DC current gain drops off.
• Characterization Information (Ta=25°C)
Parameters
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Cutoff Frequency
Minimum Noise Figure
Associated Gain
Insertion Gain |S₂₁|²
in 50 Ohm system
Conditions
Symbol Min Typ. Max Unit
V_CB =3V
V_EB =1V
V_CE =2V, I_C =1mA
V_CE =1V, I_C =10mA
V_CE =3V, I_C =12mA
V_CE =2V, I_C =4.2mA, f =0.9GHz
V_CE =5V, I_C =4.5mA, f =0.9GHz
V_CE =2V, I_C =4.2mA, f =0.9GHz
V_CE =5V, I_C =4.5mA, f =0.9GHz
V_CE =2V, I_C =4.2mA, f =0.9GHz
V_CE =5V, I_C =4.5mA, f =0.9GHz
I_CBO
I_EBO
h_FE
f_T
NF_min
G_A
|S₂₁|²
- - 1 uA
- - 1 uA
50 80 200
- 7.6 - GHz
- 9 - GHz
- 1.4 - dB
- 1.6 - dB
- 12 - dB
- 13.5 - dB
- 12.8 - dB
- 13.5 - dB
HSC5094
HSMC Product Specification