HSC4242 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6739-C
Issued Date : 1994.05.18
Revised Date : 1999.08.01
Page No. : 1/3
HSC4242
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC4242 is designed for triple diffused planar type and high
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 450 V
BVCEO Collector to Emitter Voltage................................................................................. 400 V
BVEBO Emitter to Base Voltage ......................................................................................... 10 V
IC Collector Current .............................................................................................................. 7 A
IB Base Current .................................................................................................................... 2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
450
-
BVCEO
400
-
BVEBO
10
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
15
-
*hFE2
10
-
*hFE3
10
-
Classification Of hFE1
Max.
-
-
-
100
100
0.8
1.2
55
-
-
Unit
Test Conditions
V
IC=1mA, IE=0
V
IC=100mA, IB=0
V
IE=1mA, IC=0
uA VCB=450V, IE=0
uA VEB=10V, IC=0
V
IC=4A, IB=0.8A
V
IC=4A, IB=0.8A
IC=0.8A, VCE=5V
IC=2A, VCE=5V
IC=4A, VCE=5V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
A
15-28
B1
22-35
B2
29-42
B3
36-49
B4
43-55
HSMC Product Specification