HSC3953S Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6502
Issued Date : 1992.08.25
Revised Date : 2001.01.01
Page No. : 1/3
HSC3953S
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High-definition CRT display video output, wide-band amplifier
applications.
Features
• High fT: fT=500MHz
• High breakdown voltage: VCEO=120V min
• Small reverse transfer capacitance
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 120 V
VCEO Collector to Emitter Voltage ................................................................................... 120 V
VEBO Emitter to Base Voltage ............................................................................................. 3 V
IC Collector Current ...................................................................................................... 200 mA
Icp Peak Collector Current ............................................................................................ 400 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
120
-
-
V
IC=10uA, IE=0
BVCEO
120
-
-
V
IC=1mA, IB=0
BVEBO
3
-
-
V
IE=100uA, IC=0
ICBO
-
-
0.1
uA VCB=80V, IE=0
IEBO
-
-
0.1
uA VEB=2V, IC=0
*VCE(sat)
-
-
1
V
IC=30mA, IB=3mA
*VBE(sat)
-
-
1
V
IC=30mA, IB=3mA
*hFE1
60
160
320
VCE=10V, IC=10mA
*hFE2
40
-
-
VCE=10V, IC=100mA
fT
-
400
-
MHz VCE=10V, IC=50mA,
Cob
-
2.1
-
pF IE=0, VCB=30V, f=1MHZ
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE1
Rank
Range
D
60-120
E
100-200
F
160-320
HSMC Product Specification