HSC3953 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6602
Issued Date : 1993.03.15
Revised Date : 2001.01.01
Page No. : 1/3
HSC3953
NPN EPITAXIAL PLANAR TRANSISTOR
Description
High–definition CRT display video output, wide-band amplifier.
Features
• High fT: 500MHz
• High Breakdown Voltage: BVCEO=120Vmin
• Small Reverse Transfer Capacitance & Excellent HF Response: Cre=1.7pF
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................... 1.3 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 8 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 120 V
BVCEO Collector to Emitter Voltage................................................................................. 120 V
BVEBO Emitter to Base Voltage ........................................................................................... 3 V
IC Collector Current ....................................................................................................... 200 mA
Icp Peak Collector Current............................................................................................. 400 mA
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
120
-
BVCEO
120
-
BVEBO
3
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
60
-
*hFE2
40
-
fT
-
400
Classification Of hFE1
Max.
-
-
-
0.1
0.1
1
1
320
-
-
Unit
Test Conditions
V
V
V
uA
uA
V
V
MHz
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=120V, IE=0
VEB=2V
IC=30mA, IB=3mA
IC=30mA, IB=3mA
IC=10mA, VCE=10V
IC=100mA, VCE=10V
IC=50mA , VCE=10V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
D
60-120
E
100-200
F
160-320
HSMC Product Specification