HSC3417 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6618-C
Issued Date : 1994.05.12
Revised Date : 2000.10.01
Page No. : 1/3
HSC3417
NPN EPITAXIAL PLANAR TRANSISTOR
Features
• High–Definition CRT Display Video Output Applications
• High Breakdown Voltage: BVCEO=300V
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 7 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 300 V
BVCEO Collector to Emitter Voltage................................................................................. 300 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ....................................................................................................... 100 mA
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
300
-
BVCEO
300
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE
40
-
fT
-
70
Cob
-
2.6
Classification Of hFE
Max.
-
-
-
100
100
600
1
320
-
-
Unit
Test Conditions
V
V
V
nA
nA
mV
V
MHz
pF
IC=100uA
IC=1mA
IE=10uA
VCB=200V
VEB=4V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=10mA, VCE=10V
IC=10mA ,VCE=30V, f=100MHz
VCB=30V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
C
40-80
D
E
F
60-120 100-200 160-320
HSMC Product Specification