HSC2682 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSC2682
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Audio frequency power amplifier, high frequency power amplifier.
Spec. No. : HE6626-B
Issued Date : 1994.12.07
Revised Date : 2000.10.01
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................... 1.2 W
Total Power Dissipation (Tc=25°C) ...................................................................................... 8 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 180 V
BVCEO Collector to Emitter Voltage................................................................................. 180 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ....................................................................................................... 100 mA
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
180
-
-
BVCEO
180
-
-
BVEBO
5
-
-
ICBO
-
-
1
IEBO
-
-
1
*VCE(sat)
-
120
500
*VBE(sat)
-
0.8
1.5
*hFE1
90
-
-
*hFE2
100
200
320
fT
-
200
-
Cob
-
-
5
Classification Of hFE2
Unit
Test Conditions
V
V
V
uA
uA
mV
V
MHz
pF
IC=1mA
IC=10mA
IE=10uA
VCB=180V
VEB=3V
IC=50mA, IB=5mA
IC=50mA, IB=5mA
IC=1mA, VCE=5V
IC=10mA, VCE=5V
IC=20mA, VCE=10V
VCB=10V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
O
100-200
Y
160-320
HSMC Product Specification