HSC2625 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HR200201
Issued Date : 1996.03.14
Revised Date : 2002.08.13
Page No. : 1/2
HSC2625
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC2625 is designed for triple diffused planer type high voltage,
high speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-3P
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 80 W
• Maximum Voltages and Currents
VCBO Collector to Base Voltage ....................................................................................... 450 V
VCEO Collector to Emitter Voltage.................................................................................... 400 V
VEBO Emitter to Base Voltage.............................................................................................. 7 V
IC Collector Current ............................................................................................................ 10 A
IB Base Current ..................................................................................................................... 3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
450
-
BVCEO
400
-
BVEBO
7
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE1
10
-
*hFE2
6
-
Max.
-
-
-
1
100
1.2
1.5
30
-
Unit
Test Conditions
V IC=1mA
V IC=10mA
IE=100uA
mA VCB=450V
uA VEB=7V
V IC=4A, IB=800mA
V IC=4A, IB=800mA
IC=0.5A, VCE=5V
IC=4A, VCE=5V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HSC2625
HSMC Product Specification