HSC2240 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSC2240
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Low noise audio amplifier applications
Spec. No. : HE6529
Issued Date : 1992.12.16
Revised Date : 2002.10.09
Page No. : 1/4
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 150 V
VCEO Collector to Emitter Voltage .................................................................................... 150 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current ....................................................................................................... 100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
150
-
BVCEO
150
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on) 500
-
*hFE
120
-
fT
-
100
Cob
-
3
Classification of hFE
Max.
-
-
-
100
100
300
800
400
-
-
Unit
V
V
V
nA
nA
mV
mV
MHz
pF
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=120V, IE=0
VEB=5V, IC=0
IB=1mA, IC=10mA
IC=2mA, VCE=6V
VCE=6V, IC=2mA
VCE=6V, IC=1mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Y
120-240
GR
200-400
HSC2240
HSMC Product Specification