HSC2228Y Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSC2228Y
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC2228Y is designed for high voltage amplifier applications.
Spec. No. : HE6527-B
Issued Date : 1993.01.15
Revised Date : 2000.10.01
Page No. : 1/3
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 160 V
VCEO Collector to Emitter Voltage ................................................................................... 160 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ........................................................................................................ 50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
160
-
BVCEO
160
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE
60
-
fT
50
-
Cob
-
-
Classification of hFE
Max.
-
-
-
1
1
0.6
1
320
-
4
Unit
Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=160V, IE=0
VEB=5V
IC=2mA, IB=20mA
IC=2mA, IB=20mA
VCE=10V, IC=10mA
VCE=30V, IC=10mA
VCB=10V, f=1MHZ
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
D
60-120
E
100-200
F
160-320
HSMC Product Specification