HSC1959SP Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HSP200203
Issued Date : 1998.01.06
Revised Date : 2002.03.04
Page No. : 1/3
HSC1959SP
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HSC1959Y is designed for audio frequency Low power amplifier applications.
Features
• Execellent hFE linearity
• Complementary to HSA562
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 500 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 35 V
VCEO Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage .............................................................................................. 5 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
35
-
BVCEO
30
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
120
-
*hFE2
40
-
fT
-
300
Cob
-
7
Max.
-
-
100
100
0.25
1
240
-
-
-
Unit
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA
IC=1mA
VCB=35V
VEB=5V
IC=100mA, IB=10mA
VCE=1V, IC=100mA
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=20mA, VCE=6V
IE=0, VCB=6V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HSC1959SP
HSMC Product Specification