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| HSB857J Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HSB857J
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HJ200101
Issued Date : 2001.09.01
Revised Date : 2005.07.14
Page No. : 1/4
Description
Low frequency power amplifier.
Absolute Maximum Ratings (TA=25°C)
TO-252
⢠Maximum Temperatures
Storage Temperature ............................................................................................................................. -50~+150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TC=25°C) ..................................................................................................................... 20 W
⢠Maximum Voltages and Currents
BVCBO Collector to Base Voltage......................................................................................................................... -60 V
BVCEO Collector to Emitter Voltage..................................................................................................................... -50 V
BVEBO Emitter to Base Voltage............................................................................................................................. -5 V
IC Collector Current .............................................................................................................................................. -3 A
IC Collector Current (IC Peak)............................................................................................................................ -4.5 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Min.
Typ.
Max.
-60
-
-
-50
-
-
-5
-
-
-
-
-1
-
-
-1
-
-
-1
-
-0.3
-1
-
-
-1.5
170
-
400
-
15
-
Unit
V
V
V
uA
uA
uA
V
V
MHz
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-50V
VCE=-40V
VEB=-4V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-500mA, VCE=-3V
VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HSB857J
HSMC Product Specification
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