HSB857D Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSB857D
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2002.03.06
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
• Maximum Temperatures
Storage Temperature .............................................................................................. -50~+150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).....................................................................................1.5 W
Total Power Dissipation (Tc=25°C) ......................................................................................10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.......................................................................................-60 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current.............................................................................................................. -3 A
IC Collector Current (IC Peak)........................................................................................... -4.5 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
-60
-
-
BVCEO
-50
-
-
BVEBO
-5
-
-
ICBO
-
-
-1
ICEO
-
-
-1
IEBO
-
-
-1
*VCE(sat)
-
-0.3
-1
*VBE(sat)
-
-
-1.5
*hFE
170
-
400
fT
-
15
-
Unit
V
V
V
uA
uA
uA
V
V
MHz
Test Conditions
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-50V
VCE=-40V
VEB=-4V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-500mA, VCE=-3V
VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HSB857D
HSMC Product Specification