HSB857 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSB857 / 2SB857
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier.
Spec. No. : HE6705
Issued Date : 1995.01.27
Revised Date : 2001.09.13
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -70 V
BVCEO Collector to Emitter Voltage................................................................................... -50 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current.............................................................................................................. -4 A
IC Collector Current (IC Peak).............................................................................................. -8 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-70
-
BVCEO
-50
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
35
-
*hFE2
60
-
fT
-
15
Classification Of hFE2
Max.
-
-
-
-1
-1
-1
-
320
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
IC=-10uA, IE=0
IC=-50mA, IB=0
IE=-10uA, IC=0
VCB=-50V, IC=0
IC=-2A, IB=-0.2A
IC=-1A, VCE=-4V
IC=-0.1A, VCE=-4V
IC=-1A, VCE=-4V
VCE=-4V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
hFE
B
60-120
C
100-200
D
160-320
HSB857
HSMC Product Specification