HSB772S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549
Issued Date : 1992.11.25
Revised Date : 2002.05.08
Page No. : 1/4
HSB772S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772S is designed for using in output stage of 0.75W
amplifier, voltage regulator, DC-DC converter and driver.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature .......................................................................................... -55 to +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 750 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -40 V
VCEO Collector to Emitter Voltage..................................................................................... -30 V
VEBO Emitter to Base Voltage............................................................................................. -5 V
IC Collector Current ............................................................................................................. -3 A
Characteristics (Ta=25°C)
Symbol Min.
Typ.
BVCBO
-40
-
BVCEO
-30
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-0.3
*VBE(sat)
-
-1
*hFE1
30
-
*hFE2
100
160
fT
-
80
Cob
-
55
Max.
-
-
-
-1
-1
-0.5
-2
-
400
-
-
Classification Of hFE2
Rank
Range
Q
100-200
P
160-320
Unit
Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
E
200-400
HSB772S
HSMC Product Specification