HSB772 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6605
Issued Date : 1993.05.15
Revised Date : 2002.05.08
Page No. : 1/4
HSB772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB772 is designed for using in output stage of 1w audio
amplifier, voltage regulator, DC-DC converter and relay driver.
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................... 1.4 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 10 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage...................................................................................... -40 V
BVCEO Collector to Emitter Voltage................................................................................... -30 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................... -3 A
IC Collector Current (Pulse) ................................................................................................ -7 A
IB Base Current (DC) ....................................................................................................... -0.6 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
-40
-
-
BVCEO
-30
-
-
BVEBO
-5
-
-
ICBO
-
-
-1
IEBO
-
-
-1
*VCE(sat)
-
-0.3
-0.5
*VBE(sat)
-
-1
-2
*hFE1
30
-
-
*hFE2
100
200
400
fT
-
80
-
Cob
-
55
-
Classification Of hFE2
Unit
Test Conditions
V
V
V
uA
uA
V
V
MHz
pF
IC=-100uA
IC=-1mA
IE=-10uA
VCB=-30V
VEB=-3V
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
IC=-20mA, VCE=-2V
IC=-1A, VCE=-2V
IC=-0.1A, VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
Q
100-200
P
160-320
E
200-400
HSB772
HSMC Product Specification