HSB764 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSB764
PNP EPITAXIAL PLANAR TRANSISTOR
Description
Voltage regulator, Relay driver, electrical equipment application.
Spec. No. : HE6549-B
Issued Date : 1996.11.25
Revised Date : 2000.10.01
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -60 V
VCEO Collector to Emitter Voltage .................................................................................... -50 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ............................................................................................................. -1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-60
BVCEO
-50
BVEBO
-5
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
60
*hFE2
30
fT
150
Cob
20
Classification of hFE1
Max.
-1
-1
-700
-1.2
320
Unit
Test Conditions
V
V
V
uA
uA
mV
V
MHz
pF
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-50V, IE=0
VEB=-4V, IC=0
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-2V, IC=-50mA
VCE=-2V, IC=-1A
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
D
60-120
E
100-200
F
160-320
HSMC Product Specification