HSB649A Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – SILICON PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HSB649A
SILICON PNP EPITAXIAL PLANAR TRANSISTOR
Description
Low frequency power amplifier complementary pair with HSD669A.
Spec. No. : HE6629
Issued Date : 1995.12.18
Revised Date : 2002.04.03
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation ........................................................................................................ 1 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 20 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -180 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current (DC) .................................................................................................. -1.5 A
IC Collector Current (Pulse) ................................................................................................ -3 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
-180
-
-
BVCEO
-160
-
-
BVEBO
-5
-
-
ICBO
-
-
-10
*VCE(sat)
-
-
-1
*VBE(on)
-
-
-1.5
*hFE1
60
-
200
*hFE2
30
-
-
fT
-
140
-
Cob
-
27
-
Classification Of hFE1
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-160V, IE=0
IC=-500mA, IB=-50mA
IC=-150mA, VCE=-5V
IC=-150mA, VCE=-5V
IC=-500mA, VCE=-5V
IC=-150mA ,VCE=-5V
VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
HSB649A
HSMC Product Specification