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| HSB647A Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – SILICON PNP EPITAXIAL | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HSB647A
SILICON PNP EPITAXIAL
Spec. No. : HA200201
Issued Date : 2002.01.01
Revised Date : 2005.02.14
Page No. : 1/4
Description
Low Frequency Power Amplifier Complementary Pair With HSD667A.
Absolute Maximum Ratings
TO-92
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ..................................................................................................................... 150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 900 mW
⢠Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................ -120 V
VCEO Collector to Emitter Voltage ..................................................................................................................... -100 V
VEBO Emitter to Base Voltage ............................................................................................................................... -5 V
IC Collector Current (DC) ..................................................................................................................................... -1 A
ICP Collector Current (Peak) ................................................................................................................................. -2 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cutoff Current
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
DC Current Transfer Ratio 1
DC Current Transfer Ratio 2
Gain Bandwidth Product
Collector Output Capacitance
Classification of hFE1
Rank
Range
B
60-120
Min. Typ. Max. Unit
Test Conditions
-120 -
-
V IC=-100uA, IE=0
-100 -
-
V IC=-1mA, RBE=â
-5 -
-
V IE=-10uA, IC=0
-
- -10 uA VCB=-100V, IE=0
-
- -1 V IC=-500mA, IB=-50mA
-
- -1.5 V VCE=-5V, IC=-150mA
60 - 200
VCE=-5V, IC=-150mA
30 - -
VCE=-5V, IC=-500mA
- 140 - MHz VCE=-5V, IC=-150mA
- 20 - pF VCB=-10V, f=1MHz, IE=0
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
C
100-200
HSB647A
HSMC Product Specification
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