HSB564A Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6519
Issued Date : 1993.01.15
Revised Date : 2001.10.15
Page No. : 1/3
HSB564A
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB564A is designed for general purpose low frequency power
amplifier applications.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 800 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -30 V
VCEO Collector to Emitter Voltage ..................................................................................... -25 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ............................................................................................................. -1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-30
-
BVCEO
-25
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
*VBE(sat)
-
-
*hFE
70
-
fT
-
110
Cob
-
18
Classification Of hFE
Max.
-
-
-
-100
-0.5
-1.2
400
-
-
Unit
Test Conditions
V
V
V
nA
V
V
MHz
pF
IC=-100uA, IE=0
IC=-10mA. IB=0
IE=-100uA, IC=0
VCB=-30V, IE=0
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
VCE=-1V, IC=-100mA
VCE=-6V, IC=-10mA, f=100MHz
VCB=-6V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
O
70-140
Y
120-240
GR
200-400
HSB564A
HSMC Product Specification