HSB1426 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6506
Issued Date : 1994.03.25
Revised Date : 2002.02.08
Page No. : 1/3
HSB1426
PNP EPITAXIAL PLANAR TRANSISTOR
Description
DC-DC Converter
Features
• Low Collector to Emitter Saturation Voltage
TO-92
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ -20 V
VCEO Collector to Emitter Voltage ..................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................. -6 V
IC Collector Current ............................................................................................................. -3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-20
-
BVCEO
-20
-
BVEBO
-6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*hFE
82
-
fT
-
240
Cob
-
35
Classification Of hFE1
Max.
-
-
-
-100
-100
-500
390
-
-
Unit
Test Conditions
V
V
V
nA
nA
mV
MHz
pF
IC=-50uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
IC=-2A, IB=-0.1A
VCE=-2V, IC=-100mA
VCE=-2V, IC=-500mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
P
82-180
Q
120-270
R
180-390
HSB1426
HSMC Product Specification