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| HSB1386I Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – LOW FREQUENCY TRANSISTOR (-20V,-4A) | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HSB1386I
LOW FREQUENCY TRANSISTOR (-20V, -4A)
Spec. No. : HI200201
Issued Date : 2002.02.01
Revised Date : 2005.07.13
Page No. : 1/4
Features
⢠Low VCE(sat).
VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A)
⢠Excellent DC current gain characteristics.
Structure
Epitaxial planar type PNP silicon transistor
TO-251
Absolute Maximum Ratings (TA=25°C)
Symbol
VCBO
VCEO
VEBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
IC
Collector Current
PD
Collector Power Dissipation (TC=25oC)
Tj
Junction Temperature
Tstg
Storage Temperature
Limits
-30
-20
-6
-4
-10
20
150
-55~+150
Unit
V
V
V
A
A(Pulse)*
W
oC
oC
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter B reakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Min. Typ. Max. Unit
Test Conditions
-30 -
-
V IC=-50uA
-20 -
-
V IC=-1mA
-6
IC=-50uA
-
- -0.5 uA VCB=-20V
-
- -0.5 uA VEB=-5V
-
- -1 V IC/IB=-4A/-0.1A
82 - 580
VCE=-2V, IC=-0.5A
- 110 - MHz VCE=-6V, IE=50mA, f=30MHz
- 30 - pF VCB=-20V, IE=0A, f=1MHz
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
Classification Of hFE
Rank
Range
P
82-180
Q
120-270
R
180-390
E
370-580
HSB1386I
HSMC Product Specification
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