HSB1386A Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – LOW FREQUENCY TRANSISTOR (-20V, -4A)

HI-SINCERITY
MICROELECTRONICS CORP.
HSB1386A
LOW FREQUENCY TRANSISTOR (-20V, -4A)
Spec. No. : HA200111
Issued Date : 2001.12.01
Revised Date : 2005.02.14
Page No. : 1/4
Features
• Low V_CE(sat).
V_CE(sat)=-0.55V(Typ.) (I_C/I_B=-4A/-0.1A)
• Excellent DC current gain characteristics.
TO-92
Structure
Epitaxial planar type PNP silicon transistor
Absolute Maximum Ratings (T_A=25°C)
Symbol
V_CBO
V_CEO
V_EBO
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
I_C
Collector Current
P_D
Collector Power Dissipation (Ta=25^oC)
T_j
Junction Temperature
T_stg
Storage Temperature
Limits
-30
-20
-6
-4
-10
750
150
-55~+150
Unit
V
V
V
A
A(Pulse)*
mW
o_C
o_C
Electrical Characteristics (T_A=25°C)
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
*V_CE(sat)
*hFE
fT
Cob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter B reakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Classification Of hFE
Rank
Range
P
82-180
Min.
-30
-20
-6
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
110
30
Max. Unit
Test Conditions
-
V I_C=-50uA
-
V I_C=-1mA
I_C=-50uA
-0.5 uA V_CB=-20V
-0.5 uA V_EB=-5V
-1 V I_C/I_B=-4A/-0.1A
580
V_CE=-2V, IC=-0.5A
- MHz V_CE=-6V, I_E=50mA, f=30MHz
- pF V_CB=-20V, I_E=0A, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Q
120-270
R
180-390
E
370-580
HSB1386A
HSMC Product Specification