HSB1109S Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6514
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/4
HSB1109S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSB1109S is designed for low frequency and high voltage
amplifier applications complementary pair with HSD1609S.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 900 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -160 V
VCEO Collector to Emitter Voltage ................................................................................... -160 V
VEBO Emitter to Base Voltage ............................................................................................. -5 V
IC Collector Current ...................................................................................................... -100 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-160
-
BVCEO
-160
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
60
-
*hFE2
30
-
fT
-
140
Cob
-
5.5
Classification Of hFE1
Max.
-
-
-
-10
-2
-1.5
320
-
-
-
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=-10uA, IE=0
IC=-1mA. IB=0
IE=-10uA, IC=0
VCB=-140V, IE=0
IC=-30mA, IB=-3mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-10mA
VCE=-5V, IC=-1mA
VCE=-5V, IC=-10mA, f=100MHz
VCB=-10V, IE=0, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
D
160-320
HSB1109S
HSMC Product Specification