HSB1109 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6607
Issued Date : 1993.03.15
Revised Date : 2002.02.06
Page No. : 1/3
HSB1109
PNP EPITAXIAL PLANAR TRANSISTOR
Features
• Low frequency high voltage amplifier
• Complementary pair with HSD1609
Absolute Maximum Ratings (Ta=25°C)
TO-126ML
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) .................................................................................. 1.25 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -160 V
BVCEO Collector to Emitter Voltage................................................................................. -160 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current....................................................................................................... -100 mA
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
-160
-
-
BVCEO
-160
-
-
BVEBO
-5
-
-
ICBO
-
-
-10
*VCE(sat)
-
-
-2
VBE(on)
-
-
-1.5
*hFE1
60
-
320
*hFE2
30
-
-
fT
-
140
-
Cob
-
5.5
-
Classification Of hFE1
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-140V
IC=-30mA, IB=-3mA
IC=-10mA, VCE=-5V
IC=-10mA, VCE=-5V
IC=-1mA, VCE=-5V
IC=-10mA, VCE=-5V
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
B
60-120
C
100-200
D
160-320
HSB1109
HSMC Product Specification