HSA1300D Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – SILICON PNP EPITAXIAL TYPE

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HD200202
Issued Date : 1999.07.01
Revised Date : 2002.02.20
Page No. : 1/3
HSA1300D
SILICON PNP EPITAXIAL TYPE
Description
• Strobo Flash Applications
• Medium Power Amplifier Applications
Features
• High DC Current Gain and Excellenr hFE Linearity
• hFE(1)=140-600, (VCE=-1V, IC=-0.5A)
• hFE(2)=60 (Min.), 120(Typ.), (VCE=-1V, IC=-4A)
• Low Saturation Voltage.
• VCE(sat)=-0.5V(Max.), (IC=-2A, IE=-50mA)
TO-126ML
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulsed (Note1)
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note 1: Pulse Width=10ms(Max.), Duty Cycle=30%(Max.)
Symbol
Ratios
Unit
VCBO
-20
V
VCES
-20
VCEO
-10
V
VEBO
-6
V
IC
-2
ICP
-5
A
IB
-2
A
PC
1.5
W
Tj
150
°C
Tstg
-55~150
°C
Electrical Characteristics (Ta=25°C)
Symbol
Min.
V(BR)CEO
-10
V(BR)EBO
-6
ICBO
-
IEBO
-
*hFE(1) (Note 2) 140
*hFE(2)
60
*VCE(sat)
-
VBE
-
fT
-
Cob
-
Typ.
-
-
-
-
-
120
-0.20
-0.83
140
50
Max.
-
-
-100
-100
600
-
-0.50
-1.5
-
-
Classifications of hFE
Rank
hFE(1)
Y
140-280
GR
200-400
Unit
V
V
nA
nA
V
V
MHz
pF
Test Condition
IC=10mA, IB=0
IE=-1mA, IC=0
VCE=-20V, IE=0
VBE=-6V, IC=0
VCE=-1V, IC=0.5A
VCE=-1V, IC=-4A
IC=-2A, IB=-50mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-0.5A
VCE=-10V, IE=0, f=1KHZ
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
EL
300-600
HSA1300D
HSMC Product Specification