HSA1015 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6512-B
Issued Date : 1992.11.25
Revised Date : 2000.09.15
Page No. : 1/3
HSA1015
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HSA1015 is designed for use in driver stage of AF amplifier and
general purpose amplification.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 400 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -50 V
VCEO Collector to Emitter Voltage .................................................................................... -50 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ..................................................................................................... -150 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-50
BVCEO
-50
BVEBO
-5
ICBO
-
IEBO
-
*VCE(sat)
-
*VBE(sat)
-
*hFE1
120
*hFE2
25
fT
80
Cob
-
-
-
V
IC=-100uA, IE=0
-
-
V
IC=-1mA, IB=0
-
-
V
IE=-10uA, IC=0
-
-100
nA VCB=-50V, IE=0
-
-100
nA VEB=-5V, IC=0
-
-300
mV IC=-100mA, IB=-10mA
-
-1.1
V
IC=-100mA, IB=-10mA
-
700
VCE=-6V, IC=-2mA
-
-
VCE=-6V, IC=-150mA
-
-
MHz VCE=-10V, IC=-1mA, f=100MHz
-
7
pF VCB=-10V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE1
Rank
Range
Y
120-240
GR
200-400
BL
350-700
HSMC Product Specification