HMPSA42M Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6347-B
Issued Date : 1992.11.25
Revised Date : 2000.10.01
Page No. : 1/4
HMPSA42M
NPN EPITACIAL PLANAR TRANSISTOR
Description
The HMPSA42M is designed for application as a video output to
drive color CRT, or as a dialer circuit in electronics telephone.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 300 V
VCEO Collector to Emitter Voltage ................................................................................... 300 V
VEBO Emitter to Base Voltage ............................................................................................. 6 V
IC Collector Current ....................................................................................................... 800 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
300
-
BVCEO
300
-
BVEBO
6
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
80
-
*hFE2
80
-
*hFE3
40
-
fT
50
-
Max.
-
-
-
100
200
750
900
1000
-
-
-
-
Unit
Test Conditions
V
V
V
nA
mV
mV
mV
mV
MHz
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VEB=3V, IC=0
IC=20mA, IB=2mA
IC=100mA, IB=10mA
IC=20mA, IB=2mA
IC=100mA, IB=10mA
IC=10mA, VCE=10V
IC=100mA, VCE=10V
IC=200mA, VCE=10V
IC=10mA, VCE=20V, f=100MHZ
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification