HMPSA05 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN SILICON TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMPSA05
NPN SILICON TRANSISTOR
Description
Amplifier transistor
Spec. No. : HE6301-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage ..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 4 V
IC Collector Current ....................................................................................................... 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCEO
60
-
BVEBO
4
-
ICBO
-
-
ICEO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
50
-
*hFE2
50
-
fT
100
-
Max.
-
-
-
100
100
0.25
1.2
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
V
V
MHz
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VCE=60V, IB=0
IC=100mA, IB=10mA
IC=100mA, VCE=1V
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=2V, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification