HMPS751 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – PNP SILICON TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMPS751
PNP SILICON TRANSISTOR
Description
Amplifier Transistor
Spec. No. : HE6317-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -80 V
VCEO Collector to Emitter Voltage .................................................................................... -60 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ............................................................................................................. -2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-80
-
BVCEO
-60
-
BVEBO
-5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
VBE(on)
-
-
*hFE1
75
-
*hFE2
75
-
*hFE3
75
-
*hFE4
40
-
fT
75
-
Max.
-
-
-
-0.1
-0.1
-0.5
-0.3
-1.2
-1
-
-
-
-
-
Unit
Test Conditions
V
V
V
uA
uA
V
V
V
V
MHz
IC=-100uA, IE=0
IC=-10mA, IB=0
IE=-10uA, IE=0
VCB=-80V, IE=0
VEB=-4V, IC=0
IC=-2A, IB=-200mA
IC=-1A, IB=-100mA
IC=-1A, IB=-100mA
IC=-1A, VCE=-2V
IC=-50mA, VCE=-2V
IC=-500mA, VCE=-2V
IC=-1A, VCE=-2
IC=-2A, VCE=-2V
VCE=-5V, IC=-50mA, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification