HMPS651 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN SILIOCN TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMPS651
NPN SILICON TRANSISTOR
Description
Amplifier transistor
Spec. No. : HE6326-B
Issued Date : 1992.09.09
Revised Date : 2000.09.20
Page No. : 1/4
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ........................................................................................ 80 V
VCEO Collector to Emitter Voltage ..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current .............................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
80
-
BVCEO
60
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
VBE(on)
-
-
*hFE1
75
-
*hFE2
75
-
*hFE3
75
-
*hFE4
40
-
fT
75
-
Max.
-
-
-
0.1
0.1
0.5
0.3
1.2
1
-
-
-
-
-
Unit
Test Conditions
V
V
V
uA
uA
V
V
V
V
MHz
IC=10mA, IB=0
IC=100uA, IE=0
IE=10uA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
IC=2A, IB=200mA
IC=1A, IB=100mA
IC=1A, IB=100mA
IC=1A, VCE=2V
IC=50mA, VCE=2V
IC=500mA, VCE=2V
IC=1A, VCE=2V
IC=2A, VCE=2V
IC=50mA, VCE=5V, f=100MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification