HML1225 Datasheet, PDF (1/2 Pages) Hi-Sincerity Mocroelectronics – 0.8A 300.380 VOLTAGE SCRS IGT<200uA

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1992.11.25
Revised Date : 2001.06.29
Page No. : 1/2
HML1225/HXL1225
0.8A 300/380 VOLTAGE SCRS IGT<200uA
Description
The HML1225/HXL1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Repetitive Peak Off State
Voltage
On-State Current
Average On-State Current
Peak Reverse Gate
Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Part No.
HXL1225
HML1225
Symbol
VDRM
VDRM
IT(rms)
IT(AV)
VGRM
IGM
PG(AV)
Tj
Tstg
Tsld
Min Max Unit
Test Conditions
380 -
300 -
V
V
Tj=40°C to 125°C (RGK=1K)
0.8 - A TC=40°C
0.5 - A Half Cycle=180°,TC=40°C
8 - V IGR=10uA
1 - A 10us max
0.1 - W 20ms max
-40 125 °C
-40 125 °C
- 250 °C 1.6mm from case 10s max
Classification Of IGT
Rank
HML1225
HXL1225
AA
10-18 uA
10-18 uA
AB
12-23 uA
12-23 uA
AC
17-28 uA
17-28 uA
AD
22-55 uA
22-55 uA
B
45-105 uA
45-105 uA
C
-
95-155 uA
Electrical Characteristics (Ta=25°C)
Parameter
Off-State Leakage Current
Off-State Leakage Current
On-State Voltage
On-State Threshold Voltage
On-State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Crtical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn-off Time
Thermal Resistance junc.to case
Thermal Resistance junc. to amb
Symbol Min
IDRM -
IDRM -
VT
-
-
VT(TO) -
rT
-
IGT -
VGT -
IH
-
IL
-
dv/dt 25
di/dt 30
tgd -
tg
-
Rθjc 100
Rθja 200
Max Unit
0.1 mA
5 uA
1.4 V
2.2 V
0.95 V
600 Ohm
200 uA
0.8 V
5 mA
6 mA
- V/us
- A/us
500 ns
200 us
- K/W
- K/W
Test Conditions
@VDRM (RGK=1K), Tj=125°C
@VDRM (RGK=1K), Tj=25°C
at IT=0.4A, Tj=25°C
at IT=0.8A, Tj=25°C
Tj=125°C
Tj=125°C
VD=7V
VD=7V
RGK=1K(ohm)
RGK=1K(ohm)
VD=0.67*VDRM(RGK=1K), Tj=125°C
IG=10mA,diG/dt=0.1A/us, Tj=125°C
IG=10mA,diG/dt=0.1A/us
Tc=85°C,VD=0.67*VDRM
VR=35V,IT=IT(AV)
HML1225, HXL1225
HSMC Product Specification