HMJE3055T Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6737-A
Issued Date : 1993.09.24
Revised Date : 1999.08.01
Page No. : 1/3
HMJE3055T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE3055T is designed for general purpose of amplifier and
switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperature
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 75 W
Total Power Dissipation (Ta=25°C) ................................................................................... 0.6 W
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage ...................................................................................... 70 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current ........................................................................................................... 10 A
IB Base Current .................................................................................................................... 6 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
60
-
BVCBO
70
-
BVEBO
5
-
ICBO
-
-
ICEX
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(on)
-
-
*hFE1
20
-
*hFE2
5
-
fT
2
-
Max.
-
-
-
1.
1.
700
5
1.1
8.0
1.8
100
-
-
Unit
Test Conditions
V
V
V
mA
mA
uA
mA
V
V
V
MHz
IC=200mA, IB=0
IC=10mA, IE=0
IE=10mA, IC=0
VCB=70V, IE=0
VCE=70V, VEB(off)=1.5V
VCE=30V, IB=0
VEB=5V, IC=0
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
IC=4A, VCE=4V
IC=10A, VCE=4V
VCE=10V, IC=500mA, f=0.5MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification