HMJE13009A Datasheet, PDF (1/6 Pages) Hi-Sincerity Mocroelectronics – 12 AMPERE NPN SILICON POWER TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMJE13009A
12 AMPERE NPN SILICON POWER TRANSISTOR
Spec. No. : HE200206
Issued Date : 2002.02.01
Revised Date : 2006.07.04
Page No. : 1/6
Description
The HMJE13009A is designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical. They are particularly suited for 115 and
220V switch-controls, Solenoid/Relay drivers and Deflectioncircuits.
Specification Features
• V_CEO(sus)=400V
• Reverse Bias SOA with Inductive Loads @T_C=100°C
• Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C…tc@8A, 100°C is 120ns(Typ.)
• 700V Blocking Capability
• SOA and Switching Applications Information
TO-220AB
Absolute Maximum Ratings
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak*
Base Current-Continuous
Base Current-Peak*
Emitter Current-Continuous
Emitter Current-Peak
Total Power Dissipation@T_A=25°C
Derate above 25°C
Total Power Dissipation@T_C=25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes:
1/8” from Case for 5 Seconds
Symbol
Max.
Unit
V_CEO(sus)
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
I_E
I_EM
P_D
400
Vdc
700
Vdc
9
Vd
12
Adc
24
Adc
6
Adc
12
Adc
18
Adc
36
Adc
2
Watts
16
mW/°C
100
Watts
P_D
800
mW/°C
TJ, Tstg
-65 to +150
°C
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Symbol
R_θJC
R_θJA
T_L
Max.
1.25
62.5
275
Unit
°C/W
°C/W
°C
HMJE13009A
HSMC Product Specification