HMJE13003T Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HT200211
Issued Date : 2000.08.01
Revised Date : 2002.05.08
Page No. : 1/3
HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMJE13003T is designed for high voltage. High speed switching
inductive circuits and amplifier applications.
Features
• High Speed Switching
• Low Saturation Voltage
• High Reliability
TO-126
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 3.5 W
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 8 V
IC Collector Current (DC) ...................................................................................................... 1 A
IC Collector Current (Pulse) .................................................................................................. 2 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
600
-
BVCEO
400
-
BVEBO
8
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)1
-
-
*VBE(sat)2
-
-
*hFE1
10
-
*hFE2
10
-
*hFE3
6
-
Max.
-
-
-
10
10
0.8
0.9
1.2
1.8
50
-
-
Unit
Test Conditions
V
IC=1mA, IE=0
V
IC=10mA, IB=0
V
IE=1mA, IC=0
uA VCB=600V, IE=0
uA VBE=9V, IC=0
V
IC=0.1A, IB=10mA
V
IC=0.3A, IB=30mA
V
IC=0.1A, IB=10mA
V
IC=0.3A, IB=30mA
IC=0.3A, VCE=5V
IC=0.5A, VCE=5V
IC=1A, VCE=5V
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMJE13003T
HSMC Product Specification