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| HMJE13001 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – HMJE13001 | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HMJE13001
NPN Triple Diffused Planar Type High Voltage Transistor
Spec. No. : HA200213
Issued Date : 2002.06.01
Revised Date : 2005.02.05
Page No. : 1/4
Description
The HMJE13001 is a medium power transistor designed for use in switching
applications.
Features
⢠High breakdown voltage
⢠Low collector saturation voltage
⢠Fast switching speed
TO-92
Absolute Maximum Ratings
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................................................... +150 °C
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ...................................................................................................................... 1 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 10 W
⢠Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 600 V
BVCEO Collector to Emitter Voltage.................................................................................................................... 400 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current (DC) ................................................................................................................................ 300 mA
IC Collector Current (Pulse)............................................................................................................................ 600 mA
IB Base Current (DC)........................................................................................................................................ 40 mA
IB Base Current (Pulse).................................................................................................................................. 100 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
Min.
Typ.
Max.
600
-
-
400
-
-
6
-
-
-
-
10
-
-
10
-
-
10
-
-
400
-
-
750
-
-
1
8
-
-
10
-
36
Unit
Test Conditions
V
IC=100uA
V
IC=10mA
V
IE=10uA
uA VCB=550V
uA VCB=400V
uA VEB=6V
mV IC=50mA, IB=10mA
mV IC=100mA, IB=20mA
V
IC=50mA, IB=10mA
VCE=10V, IC=10mA
VCE=10V, IC=50mA
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HMJE13001
HSMC Product Specification
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