HMBZ5221B Datasheet, PDF (1/12 Pages) Hi-Sincerity Mocroelectronics – ZENER DIODES

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6803
Issued Date : 1995.12.28
Revised Date : 2002.10.28
Page No. : 1/12
HMBZ5221B
thru
HMBZ5257B ZENER DIODES
SOT-23
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
TA=25°C, Derate above 25°C
Total Device Dissipation
Alumina Substrate**TA=25°C, Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
PD
RθJA
Tj, Tstg
Max
225
1.8
300
2.4
417
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C
*FR-5 - 1.0×0.75×0.062 in. **Alumina - 0.4×0.3×0.024 in. 99.5% alumina.
Electrical Characteristic (VF=0.9V Max @IF=10mA for all types.)
Device
Marking
Code
HMBZ52221B 18A
HMBZ5222B 18B
HMBZ5223B 18C
HMBZ5225B 18E
HMBZ5226B 8A
HMBZ5227B 8B
HMBZ5228B 8C
HMBZ5229B 8D
HMBZ5230B 8E
HMBZ5231B 8F
HMBZ5232B 8G
HMBZ5233B 8H
HMBZ5234B 8J
HMBZ5235B 8K
HMBZ5236B 8L
HMBZ5237B 8M
HMBZ5238B 8N
HMBZ5239B 8P
HMBZ5240B 8Q
HMBZ5241B 8R
HMBZ5242B 8S
HMBZ5243B 8T
HMBZ5244B 8U
Test
Current
IZT(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
Zener
Voltage
VZ(V)
2.4 ±5%
2.5 ±5%
2.7 ±5%
3.0 ±5%
3.3 ±5%
3.6 ±5%
3.9 ±5%
4.3 ±5%
4.7 ±5%
5.1 ±5%
5.6 ±5%
6.0 ±5%
6.2 ±5%
6.8 ±5%
7.5 ±5%
8.2 ±5%
8.7 ±5%
9.1 ±5%
10 ±5%
11 ±5%
12 ±5%
13 ±5%
14 ±5%
ZZK
IZ=0.25mA
ΩMax
1200
1250
1300
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
ZZT
IZ=IZT
ΩMax
30
30
30
29
28
24
23
22
19
17
11
7.0
7.0
5.0
6.0
8.0
8.0
10
17
22
30
13
15
Max. Reverse
Current
IR(uA) @VR(V)
100
1.0
100
1.0
75
1.0
50
1.0
25
1.0
15
1.0
10
1.0
5.0
1.0
5.0
2.0
5.0
2.0
5.0
3.0
5.0
3.5
5.0
4.0
3.0
5.0
3.0
6.0
3.0
6.5
3.0
6.5
3.0
7.0
3.0
8.0
2.0
8.4
1.0
9.1
0.5
9.9
0.1
10
HMBZ52XXB Series
HSMC Product Specification