HMBTH10 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200101
Issued Date : 2000.02.01
Revised Date : 2002.10.25
Page No. : 1/3
HMBTH10
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBTH10 is designed for use in VHF & UHF oscillators and VHF
mixer in tuner of a TV receiver.
Features
• High frequency
• Very low capacitance
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 20 V
VCEO Collector to Emitter Voltage...................................................................................... 15 V
VEBO Emitter to Base Voltage.............................................................................................. 3 V
IC Collector Current ......................................................................................................... 50 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
20
-
BVCEO
15
-
BVEBO
3
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE
60
-
Cob
-
1.5
fT
650
-
Max.
-
-
-
100
100
500
0.95
-
-
-
Unit
Test Conditions
V
V
V
nA
nA
mV
V
pF
MHz
IC=100uA
IC=1mA
IC=10uA
VCB=20V
VEB=2V
IC=4mA, IB=0.4mA
VCE=10V, IC=4mA
VCE=10V, IC=4mA
VCB=10V, f=1MHz
VCB=10V, IC=4mA, f=100MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBTH10
HSMC Product Specification