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HMBTA14 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR
HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA14
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6841
Issued Date : 1994.07.29
Revised Date : 2004.09.01
Page No. : 1/4
Description
Darlington Amplifier Transistor
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150 °C
Junction Temperature................................................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW
• Maximum Voltages and Currents (TA=25°C)
VCBO Collector to Base Voltage ........................................................................................................................... 30 V
VCES Collector to Emitter Voltage ........................................................................................................................ 30 V
VEBO Emitter to Base Voltage .............................................................................................................................. 10 V
IC Collector Current ....................................................................................................................................... 300 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
*VCE(sat)
VBE(on)
*hFE1
*hFE2
fT
Cob
Min.
30
30
10
-
-
-
-
10K
20K
125
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCB=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBTA14
HSMC Product Specification
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