HMBTA13 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
HMBTA13
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Amplifier Transistor
Spec. No. : HE6842
Issued Date : 1994.07.29
Revised Date : 2002.12.27
Page No. : 1/4
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures
Storage Temperature ........................................................................................... -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW
• Thermal Resistance
Junction To Ambient Rθja............................................................................................ 556 ^oC/W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 30 V
VCES Collector to Emitter Voltage ...................................................................................... 30 V
VEBO Emitter to Base Voltage............................................................................................ 10 V
IC Collector Current........................................................................................................ 300 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
30
-
BVCES
30
-
BVEBO
10
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
5K
-
*hFE2
10K
-
fT
125
-
Cob
-
-
Max.
-
-
-
100
100
1.5
2.0
-
-
-
6
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test Conditions
IC=100uA
IC=100uA
IE=10uA
VCB=30V
VEB=10V
IC=100mA, IB=0.1mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
VCE=5V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMBTA13
HSMC Product Specification